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• W2015452013 abstract "We report the structural and electrical properties of ultrathin-barrier AlN/GaN heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular beam epitaxy. Structures with barrier thicknesses between 1.5 nm and 7.5 nm were grown and characterized. We observe that AlN/GaN structures with barriers of 3.0 nm exhibit the highest Hall mobility, approximately 1700 cm2/Vs. Furthermore, the Hall mobility is much diminished in heterostructures with AlN barriers thicker than 4.5 nm, coincident with the onset of strain relaxation." @default.
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• W2015452013 date "2013-10-01" @default.
• W2015452013 modified "2023-09-25" @default.
• W2015452013 title "Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates" @default.
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• W2015452013 doi "https://doi.org/10.1016/j.jcrysgro.2013.05.029" @default.
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