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- W2015478210 abstract "We have studied the effects of Si ion implantation and post-annealing on yellow luminescence (YL) from GaN. Two types of GaN samples grown by the metal-organic chemical vapor deposition method and labeled as GaN1 and GaN2 were studied. The PL spectrum of the as-grown GaN1 sample was dominated by a strong YL and that of the as-grown GaN2 sample was almost free from YL. After Si ion implantation with doses of both 1.3×1013 and 1.0×1016 cm−2, the intensity ratios of YL to near band edge (NBE) emission (IY/INBE) for the GaN1 samples decreased markedly compared with those of the corresponding unimplanted ones both before and after post-annealing at temperatures up to 950°C. However, for the Si-ion-implanted GaN2 sample with a dose of 1.3×1013 cm−2, IY/INBE increased compared with that of the as-grown one both before and after post-annealing. Besides, the IY/INBE for Si-ion-implanted GaN1 with a dose of 1.3×1013 cm−2 increased monotonically with annealing temperature. Our results show that only the Si ion implantation being accompanied with high-temperature post-annealing could produce YL. The possible reasons for the marked reduction in IY/INBE for the GaN1 sample after Si-ion-implantation have been discussed." @default.
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- W2015478210 date "2002-09-01" @default.
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- W2015478210 title "Effects of Si ion implantation and post-annealing on yellow luminescence from GaN" @default.
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- W2015478210 doi "https://doi.org/10.1016/s0921-4526(02)00598-7" @default.
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