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- W2015479911 abstract "Abstract We report the influence of a small quantity of Cl 2 , which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si 2 H 6 , on both the epitaxial growth rate and the B-doping properties for each Si and Si 1- x Ge x film. The small quantity of Cl 2 inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si 1- x Ge x -SEG using Cl 2 , that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced." @default.
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- W2015479911 date "1993-02-01" @default.
- W2015479911 modified "2023-10-14" @default.
- W2015479911 title "The influence of Cl2 on Si1 - xGex selective epitaxial growth and B-doping properties by UHV-CVD" @default.
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- W2015479911 doi "https://doi.org/10.1016/0022-0248(93)90666-k" @default.
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