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- W2015531213 abstract "A new EPR spectrum is resolved in the N+-implanted silicon, and this center can be produced only by the 〈110〉 channeling ions in the region underneath the amorphous layer." @default.
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- W2015531213 date "1974-10-01" @default.
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- W2015531213 title "An orientation-dependent defect in ion-implanted silicon" @default.
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