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• W2015536317 abstract "Multi-directional ion beam irradiation is applied to control the crystal orientation of Si thin films during growth via plasma-enhanced chemical vapor deposition. The primary ion beam is generated by electron cyclotron resonance using an SiH4/H2 mixture, and the auxiliary beam is obtained by redirecting a portion of the primary beam with a metal reflector. These two beams simultaneously hit the surface of the growing film from different directions. With this arrangement, we succeeded in controlling the orientation of the growth of deposited Si grains in virtually the same direction." @default.
• W2015536317 created "2016-06-24" @default.
• W2015536317 creator A5069792600 @default.
• W2015536317 date "2012-06-01" @default.
• W2015536317 modified "2023-09-26" @default.
• W2015536317 title "Control of the azimuthal orientation of grains in polycrystalline Si films" @default.
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• W2015536317 doi "https://doi.org/10.1063/1.4730402" @default.
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