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- W2015540413 abstract "Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure have a threshold-current density, Jth, of 310 A/cm2 and relatively high values for the characteristic temperatures of the threshold current, T0 (135 K), and differential quantum efficiency, T1 (900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, PCOMD, is 17.4 MW/cm2; that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers." @default.
- W2015540413 created "2016-06-24" @default.
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- W2015540413 date "1998-01-05" @default.
- W2015540413 modified "2023-09-22" @default.
- W2015540413 title "6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers" @default.
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- W2015540413 doi "https://doi.org/10.1063/1.120628" @default.
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