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• W2015564889 abstract "Abstract Hydrogenated amorphous silicon carbide ( a -SiC x :H) films were prepared by the decomposition of tetramethylsilane (TMS) with microwave discharge flow of Ar. When radio-frequency (RF) bias voltage (−  V RF ) was applied to the substrate, the film hardness increased as (2.39 ± 1.12)–(9.15 ± 0.55) GPa for −  V RF  = 0–100 V. The a -SiC x :H films prepared under various −  V RF conditions were analyzed by the carbon-K near edge X-ray absorption fine structure (NEXAFS), by the elastic recoil detection analysis (ERDA), and by the X-ray photoelectron spectroscopy (XPS). From a quantitative analysis of NEXAFS, the sp 2 /(sp 2 + sp 3 ) ratios of C atoms were evaluated as 67.9 ± 2.0, 55.4 ± 2.7, and 51.7 ± 0.7% for −  V RF  = 0, 60, and 100 V, respectively. From ERDA, hydrogen content of the film prepared under the condition of −  V RF  = 100 V was found to decrease 28% comparing with that under −  V RF  = 0 V. It is suggested that the cause of the increase of the film hardness when applying −  V RF is predominantly the growth of the sp 3 -hybridized structure of C atoms accompanied by the decrease of hydrogen terminations." @default.
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• W2015564889 date "2011-03-01" @default.
• W2015564889 modified "2023-09-25" @default.
• W2015564889 title "Local structural analysis of a-SiC :H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar" @default.
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• W2015564889 doi "https://doi.org/10.1016/j.diamond.2011.01.020" @default.
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