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- W2015571209 abstract "We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100 mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage operation, which resulted in excellent RF power performance at 18 GHz. The possibility to achieve sub-100-nm-gate-length GaN-on-Si devices with low RF dispersion under high bias is also demonstrated for the first time, promising breakthrough performance of GaN-on-Si technology in millimeter-wave applications." @default.
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- W2015571209 date "2012-03-05" @default.
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- W2015571209 title "Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors" @default.
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