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• W2015604846 abstract "We have improved and evaluated hydrophilic and hydrophobic chemical treatments to prepare Si(001) and Si(111) wafers for epitaxial growth substrates. In the hydrophilic case, we found that a simple chemical treatment in a mixture of H2SO4 and H2O2 solutions has the same effect as the traditional RCA-based methods. However, the boron contamination of 5×1018 atoms cm−3 on the resultant surface after removal of its oxide layer is difficult to prove in nature and blocks surface diffusion of Si adatom at the initial stage of crystal growth. In the hydrophobic case, improvement of preparation facilities in order to free a sample from oxygen allows a surface to be obtained that is clean enough for crystal growth without the boron problem. In both cases, there is no difference in the carbon contamination concentration of 2–4×1018 atoms cm−3. These results demonstrate that the hydrophobic surface has advantages. We further studied the relationship of surface contamination and surface structures of hydrophobic Si(001) and Si(111). With increasing annealing temperature in UHV, the Si(001) surface exhibited c(4×4) in the narrow range of 580–750°C, and eventually, a very weak SiC transmission pattern appeared above 750°C. The simultaneous disappearance of c(4×4) and appearance of a SiC pattern indicates the association of the c(4×4) reconstruction with carbon. The carbon concentration of 2.5–4×1018 atoms cm−3 is insufficient for carbon atoms to form a component of the c(4×4) structure, and therefore the carbon must have another effect. A consequence of this conclusion is that carbon is not responsible for C-type defects, and we speculate that boron may be the origin. The Si(111) surface showed (3×3) at between 400°C and 600°C, and the reconstruction is independent of the carbon contamination." @default.
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• W2015604846 date "1998-05-01" @default.
• W2015604846 modified "2023-09-25" @default.
• W2015604846 title "Surface preparation of Si substrates for epitaxial growth" @default.
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• W2015604846 doi "https://doi.org/10.1016/s0039-6028(98)00131-9" @default.
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