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- W2015609506 abstract "Microcrystalline silicon (µc-Si) films were deposited by inductively coupled plasma chemical vapor deposition with a low-frequency and low-duty pulse substrate bias (PSB). The crystallinity of the films was significantly improved by the PSB. In the case of the low-frequency and low-duty PSB, the duty ratio affected the crystallinity more than the negative peak voltage. Cross-sectional transmission electron microscopy measurements revealed that the nucleation density at the µc-Si/glass interface was increased by the PSB. This technique will be useful in fabricating high-performance bottom-gate µc-Si thin-film transistors for large-area electronics." @default.
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- W2015609506 date "2010-05-01" @default.
- W2015609506 modified "2023-10-18" @default.
- W2015609506 title "Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias" @default.
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- W2015609506 doi "https://doi.org/10.1143/jjap.49.050202" @default.
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