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- W2015657369 abstract "A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VO x films were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VO x /Cu/Ti/SiO 2 /Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VO x /V/Cu/Ti/SiO 2 /Si, Pt/VO x /Al/Ti/SiO 2 /Si and Pt/VO x /Pt/Ti/SiO 2 /Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VO x /Cu/Ti/SiO 2 /Si device." @default.
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- W2015657369 date "2011-10-01" @default.
- W2015657369 modified "2023-09-27" @default.
- W2015657369 title "Investigation on the Electric-Field-Induced Metal-Insulator Transition in Vo<sub>X</sub>-Based Devices" @default.
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- W2015657369 doi "https://doi.org/10.4028/www.scientific.net/amm.130-134.1" @default.
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