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- W2015676985 abstract "Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) ∥ Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) ∥ Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) ∥ Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration." @default.
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- W2015676985 date "2015-03-25" @default.
- W2015676985 modified "2023-10-14" @default.
- W2015676985 title "NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains" @default.
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- W2015676985 doi "https://doi.org/10.7567/jjap.54.04da09" @default.
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