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• W2015759737 abstract "Oriented growth of diamond has been attempted on hexagonal GaN layers using conventional microwave plasma-assisted chemical vapor deposition (MP-CVD). GaN layers used as a substrate are grown on sapphire substrates by metal organic chemical vapor deposition (MO-CVD). Carburization, bias-enhanced nucleation and crystal growth processes are successively carried out. Oriented growth of diamond grains is demonstrated by the scanning electron microscopic image. It is suggested that an X-ray diffraction signal detected at 2θ=43.9° is due to the (111) face of diamond. Moreover, a Raman signal which peaked at 1333 cm−1 supports the growth of diamond." @default.
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• W2015759737 date "2001-03-01" @default.
• W2015759737 modified "2023-09-25" @default.
• W2015759737 title "Oriented growth of diamond on (0001) surface of hexagonal GaN" @default.
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• W2015759737 doi "https://doi.org/10.1016/s0925-9635(00)00448-9" @default.
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