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- W2015763315 abstract "Epitaxial growth of GaAs has been achieved on CaF2, α-Al2O3 and spinel substrates. X-ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in terms of supersaturation and its influence on nucleation and layer growth. Epitaktische Abscheidungen von GaAs wurden auf Flußspat-, Korund- und Spinellsubstraten erhalten. Röntgenuntersuchungen zeigten eine eindeutige Beziehung zwischen der Schichtperfektion und der Qualität des Substratmaterials. Das Auftreten von Epitaxie bei pyrolytischen Verfahren wird durch eine Analyse der Übersättigung und deren Einfluß auf Keimbildung und Wachstum diskutiert." @default.
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- W2015763315 date "1974-01-01" @default.
- W2015763315 modified "2023-10-16" @default.
- W2015763315 title "Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 System (III) Heteroepitaxy on Isolating Substrates" @default.
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- W2015763315 doi "https://doi.org/10.1002/crat.19740090504" @default.
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