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- W2015763396 abstract "The paper deals with the determination of the electric field and potential distribution at the semiconductor surface by means of a mirror electron microscope. A new method of experimental solution to this problem is proposed, which is based on measurements of the current density of electrons scattered by the lens electrostatic field close to the specimen surface. The current data provided information for the computation of the surface field and potential distribution. A demonstration experiment was performed using silicon samples with an artificially introduced resistivity gradient." @default.
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- W2015763396 date "1979-04-01" @default.
- W2015763396 modified "2023-09-24" @default.
- W2015763396 title "A new method of determination of the potential distribution at the semiconductor surface in a mirror electron microscope" @default.
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- W2015763396 doi "https://doi.org/10.1088/0022-3735/12/4/024" @default.
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