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- W2015784030 abstract "By the use of thermally cracked Si2H6, the Si coverage on Ge(0 0 1) increases compared to the case using non-cracked Si2H6 and the Si adsorption coverage properties exhibit self-limiting saturation behavior. In the atomic-layer epitaxy (ALE) mode, atomic layer-growth controllability is obtained with thermally cracked Si2H6. The β2/β1 peak height ratios in the temperature programmed desorption spectra obtained from thermally cracked-Si2H6-exposed surfaces start increasing at a similar temperature where the onset of an increase in the cracking rate from Si2H6 to SiH2+SiH4 and the onset of an increase in Si saturation coverage upon thermally cracked-Si2H6 exposure are observed, and the β2/β1 peak height ratios approach a value obtained from a dihydride Si(0 0 1) surface, suggesting systematically that the increase in the Si saturation coverage is related to the adsorption of the decomposed :SiH2 species and the :SiH2 species that play an important role on the growth mechanisms. The experimental and theoretical Auger electron spectroscopy analysis indicate that an Si/Ge interface grown by this Si ALE on Ge(0 0 1) is abrupt and has little segregation and intermixing." @default.
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- W2015784030 date "2002-04-01" @default.
- W2015784030 modified "2023-09-27" @default.
- W2015784030 title "New Si atomic-layer-controlled growth technique with thermally cracked hydride molecule" @default.
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- W2015784030 doi "https://doi.org/10.1016/s0022-0248(01)02225-4" @default.
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