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• W2015816530 abstract "The electrical characteristics of low-temperature-processing Al2O3 films were studied. With an anodization SiO2 film as a buffer layer, Al2O3 dielectric was grown on it by oxidizing an ultra-thin aluminum film in nitric acid, followed by a surface DAC-ANO compensation. The significant development is, when the Al2O3 film fabrication of this experiment was repeated, which means one more same Al2O3 layer deposition, the sample demonstrated satisfactory electrical properties." @default.
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• W2015816530 date "2010-04-01" @default.
• W2015816530 modified "2023-10-18" @default.
• W2015816530 title "Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure" @default.
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• W2015816530 doi "https://doi.org/10.1016/j.mee.2009.09.013" @default.
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