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- W2015854837 endingPage "27" @default.
- W2015854837 startingPage "16" @default.
- W2015854837 abstract "In this paper, a new write assist technique for SRAM arrays is proposed. In this technique, to improve the write features of the SRAM cell, a negative voltage is applied to one of the bitlines in the SRAM cell while another bitline is connected to a boosted voltage. Improved write features are attributed to the boosting scheme from both sides of the SRAM cell. This technique is applied to a 10T-SRAM cell with transmission-gate access devices. The proposed design gives 2.7i?, 2.1i? faster write time, 82% and 18% improvement in write margin compared with the standard 8T-SRAM cell with and without write assist, respectively. All simulations have been done in TSMC 65nm CMOS technology. The proposed write assist technique enables 10T-SRAM cell to operate with 24% lower supply voltage compared with standard 8T-SRAM cell with negative bitline write assist. Due to the improved supply voltage scalability a 33% leakage power reduction is achieved. A new write assist technique for SRAM arrays is proposed.The proposed write assist technique is applied to a 10T-SRAM cell with transmission-gate access devices in TSMC 65nm CMOS technology.The proposed design gives 2.7i?, 2.1i? faster write time, 82% and 18% improvement in write margin compared with the standard 8T-SRAM cell with and without write assist, respectively.The proposed write assist technique enables 10T-SRAM cell to operate with 24% lower supply voltage which leads to a 33% leakage power reduction." @default.
- W2015854837 created "2016-06-24" @default.
- W2015854837 creator A5043716992 @default.
- W2015854837 creator A5050458474 @default.
- W2015854837 creator A5063360720 @default.
- W2015854837 date "2015-06-01" @default.
- W2015854837 modified "2023-09-27" @default.
- W2015854837 title "A new write assist technique for SRAM design in 65 nm CMOS technology" @default.
- W2015854837 cites W1968464410 @default.
- W2015854837 cites W1977413415 @default.
- W2015854837 cites W1995329733 @default.
- W2015854837 cites W2002612140 @default.
- W2015854837 cites W2008362573 @default.
- W2015854837 cites W2012031251 @default.
- W2015854837 cites W2014357578 @default.
- W2015854837 cites W2031020852 @default.
- W2015854837 cites W2048611611 @default.
- W2015854837 cites W2053067882 @default.
- W2015854837 cites W2059229756 @default.
- W2015854837 cites W2062742275 @default.
- W2015854837 cites W2080315717 @default.
- W2015854837 cites W2089731760 @default.
- W2015854837 cites W2094648661 @default.
- W2015854837 cites W2095913060 @default.
- W2015854837 cites W2106339466 @default.
- W2015854837 cites W2112602631 @default.
- W2015854837 cites W2115150948 @default.
- W2015854837 cites W2117211406 @default.
- W2015854837 cites W2123278390 @default.
- W2015854837 cites W2126809390 @default.
- W2015854837 cites W2136250382 @default.
- W2015854837 cites W2139340565 @default.
- W2015854837 cites W2148301792 @default.
- W2015854837 cites W2153114026 @default.
- W2015854837 cites W4244763807 @default.
- W2015854837 doi "https://doi.org/10.1016/j.vlsi.2015.01.001" @default.
- W2015854837 hasPublicationYear "2015" @default.
- W2015854837 type Work @default.
- W2015854837 sameAs 2015854837 @default.
- W2015854837 citedByCount "8" @default.
- W2015854837 countsByYear W20158548372016 @default.
- W2015854837 countsByYear W20158548372017 @default.
- W2015854837 countsByYear W20158548372018 @default.
- W2015854837 countsByYear W20158548372019 @default.
- W2015854837 countsByYear W20158548372021 @default.
- W2015854837 crossrefType "journal-article" @default.
- W2015854837 hasAuthorship W2015854837A5043716992 @default.
- W2015854837 hasAuthorship W2015854837A5050458474 @default.
- W2015854837 hasAuthorship W2015854837A5063360720 @default.
- W2015854837 hasConcept C119599485 @default.
- W2015854837 hasConcept C127413603 @default.
- W2015854837 hasConcept C149635348 @default.
- W2015854837 hasConcept C24326235 @default.
- W2015854837 hasConcept C41008148 @default.
- W2015854837 hasConcept C46362747 @default.
- W2015854837 hasConcept C68043766 @default.
- W2015854837 hasConceptScore W2015854837C119599485 @default.
- W2015854837 hasConceptScore W2015854837C127413603 @default.
- W2015854837 hasConceptScore W2015854837C149635348 @default.
- W2015854837 hasConceptScore W2015854837C24326235 @default.
- W2015854837 hasConceptScore W2015854837C41008148 @default.
- W2015854837 hasConceptScore W2015854837C46362747 @default.
- W2015854837 hasConceptScore W2015854837C68043766 @default.
- W2015854837 hasLocation W20158548371 @default.
- W2015854837 hasOpenAccess W2015854837 @default.
- W2015854837 hasPrimaryLocation W20158548371 @default.
- W2015854837 hasRelatedWork W2071524226 @default.
- W2015854837 hasRelatedWork W2145015417 @default.
- W2015854837 hasRelatedWork W2735285534 @default.
- W2015854837 hasRelatedWork W2899084033 @default.
- W2015854837 hasRelatedWork W3088940363 @default.
- W2015854837 hasRelatedWork W3122096049 @default.
- W2015854837 hasRelatedWork W4283030466 @default.
- W2015854837 hasRelatedWork W4293218636 @default.
- W2015854837 hasRelatedWork W4327925644 @default.
- W2015854837 hasRelatedWork W2189397078 @default.
- W2015854837 hasVolume "50" @default.
- W2015854837 isParatext "false" @default.
- W2015854837 isRetracted "false" @default.
- W2015854837 magId "2015854837" @default.
- W2015854837 workType "article" @default.