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- W2015862829 abstract "The resistivity $ensuremath{rho}({H}_{mathrm{ext}},T)$ and Hall effect were studied in ten $n$-type EuSe single-crystal samples with room-temperature carrier concentrations from 4.2 ifmmodetimeselsetexttimesfi{} ${10}^{18}$ to 3.5 ifmmodetimeselsetexttimesfi{} ${10}^{19}$ electrons/${mathrm{cm}}^{3}$. The electrical measurements were performed at temperatures $1.6ensuremath{le}Tensuremath{le}300$ K and external magnetic fields $0ensuremath{le}{H}_{mathrm{ext}}ensuremath{le}150$ kOe, and were supplemented by magnetization and differential susceptibility measurements to aid in the interpretation. The following phenomena were observed: (a) A very large peak in the zero-field resistivity occurred at a temperature ${T}_{max}$ which varied from ensuremath{sim} 7 to ensuremath{sim} 13 K, depending on the sample. (b) A negative magnetoresistance was observed for most temperatures and was very large near ${T}_{max}$. (c) However, in a limited temperature interval well above ${T}_{max}$, a positive magnetoresistance was observed at low fields (followed by a negative magnetoresistance at higher fields). (d) Below ensuremath{sim} 3 K, the zero-field resistivity increased rapidly with decreasing $T$, except for the sample with the highest carrier concentration. (e) The anomalous Hall effect was negligible at temperatures $Tensuremath{le}4.2$ K. Much of the data are interpreted in terms of band conduction. The mobility is then limited by spin-disorder scattering and it increases with increasing ${H}_{mathrm{ext}}$, resulting in a negative magnetoresistance. This description fails when both $Tensuremath{lesssim}{T}_{max}$ and ${H}_{mathrm{ext}}<1 mathrm{to} 10$ kOe. Under these conditions, the very high resistivity is attributed to the localization (trapping) of electrons by the $sensuremath{-}f$ (or $densuremath{-}f$) interaction. At temperatures for which the electrons are localized at ${H}_{mathrm{ext}}=0$, a field of 1 to 10 kOe delocalizes the electrons and, therefore, leads to band conduction and a much lower resistivity. At higher fields there is a negative magnetoresistance (smaller than at low fields) due to the reduction in spin-disorder scattering of the band electrons. A model for the positive magnetoresistance, which focuses on the spin splitting of the conduction band by a magnetic field, is presented in the following paper." @default.
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- W2015862829 date "1974-12-01" @default.
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- W2015862829 title "Resistivity and Hall effect of EuSe in fields up to 150 kOe" @default.
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- W2015862829 doi "https://doi.org/10.1103/physrevb.10.4765" @default.
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