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- W2015938028 abstract "P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O 2 mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×10 17 cm -3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior." @default.
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- W2015938028 date "2012-07-01" @default.
- W2015938028 modified "2023-10-14" @default.
- W2015938028 title "P-Doped <i>p</i>-Type ZnΟ Films Deposited by Sputtering and Diffusing" @default.
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- W2015938028 doi "https://doi.org/10.4028/www.scientific.net/amr.557-559.1984" @default.
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