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- W2015953089 abstract "Cu(In,Ga)Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250°C, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu(In,Ga)Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560°C. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu(In,Ga)Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized." @default.
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- W2015953089 date "2006-07-21" @default.
- W2015953089 modified "2023-09-22" @default.
- W2015953089 title "Preparation of Cu(In,Ga)Se 2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere" @default.
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- W2015953089 doi "https://doi.org/10.1088/0256-307x/23/8/081" @default.
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