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• W2015996784 abstract "Abstract Si-diffusion from Si-based substrates into yttria-stabilized-zirconia (YSZ) thin films and its impact on their microstructure and chemistry is investigated. YSZ thin films used in electrochemical applications based on micro-electrochemical systems (MEMS) are deposited via spray pyrolysis onto silicon-based and silicon-free substrates, i.e. Si x N y -coated Si wafer, SiO 2 single crystals and Al 2 O 3 , sapphire. The samples are annealed at 600 °C and 1000 °C for 20 h in air. Transmission electron microscopy (TEM) showed that the Si x N y -coated Si wafer is oxidized to SiO z at the interface to the YSZ thin film at temperatures as low as 600 °C. On all YSZ thin films, silica is detected by X-ray photoelectron spectroscopy (XPS). A particular large Si concentration of up to 11 at% is detected at the surface of the YSZ thin films when deposited on silicon-based substrates after annealing at 1000 °C. Their grain boundary mobility is reduced 2.5 times due to the incorporation of SiO 2 . YSZ films on Si-based substrates annealed at 600 °C show a grain size gradient from the interface to the surface of 3 nm to 10 nm. For these films, the silicon content is about 1.5 at% at the thin film's surface." @default.
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• W2015996784 date "2011-09-01" @default.
• W2015996784 modified "2023-09-23" @default.
• W2015996784 title "Impact of substrate material and annealing conditions on the microstructure and chemistry of yttria-stabilized-zirconia thin films" @default.
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• W2015996784 doi "https://doi.org/10.1016/j.jpowsour.2011.03.077" @default.
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