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- W2016018827 abstract "Gallium arsenide has been grown upon (111), (111) and (110) surfaces of ZnSe by liquid phase epitaxy from Ga and Sn solutions. GaAs films grown from Ga solutions were usually characterized by rough junctions or solvent inclusions. These films were always degenerate n-type, with electron concentrations of about 1019/cm3. GaAs films grown from Sn solutions had smooth junctions free of gross defects, and uniformly thin films of GaAs up to 20 μm thick were obtained for (111) oriented substrates. Films grown from undoped Sn solutions were n-type with electron concentrations of about 1017/cm3. By adding Zn to the Sn solutions, p-type films with hole concentrations of 1019/cm3 were obtained." @default.
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- W2016018827 modified "2023-10-05" @default.
- W2016018827 title "Liquid phase epitaxy of gallium arsenide on zinc selenide" @default.
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- W2016018827 doi "https://doi.org/10.1016/0022-0248(72)90120-0" @default.
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