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- W2016024410 abstract "The structural and crystalline qualities of GaAs/Si heteroepitaxial layers (heteroepilayers) were remarkably improved by annealing at temperatures above 900° C, independently of the growth methods, either two-step or direct. The effects of high-temperature annealing on the optical property, residual strain, and the relation of the improvement in the quality with the out-diffusion of Si from the substrates and with vacancies in the GaAs heteroepilayers have been systematically investigated by a series of measurements using photoluminescence spectroscopy, secondary-electron microscopy, double-crystal X-ray diffraction, secondary-ion mass spectroscopy and cross-sectional transmission electron microscopy." @default.
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- W2016024410 date "1995-07-01" @default.
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- W2016024410 title "Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy" @default.
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- W2016024410 doi "https://doi.org/10.1143/jjap.34.3457" @default.
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