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• W2016036440 abstract "We examine methane–hydrogen–argon-based deep dry etching of InP for facet-quality sidewalls by reactive ion etching. A process is developed for etch depths as high as 5.8 μm. Masks studied include Ni, NiCr, Ti, SiO2, and Ti–SiO2. Sidewall roughness was estimated to be a few nm (based on high resolution scanning electron micrographs). This may be useful for fabrication of optical microelectromechanical systems, photonic wires, and photonic crystals in the InP material system." @default.
• W2016036440 created "2016-06-24" @default.
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• W2016036440 date "2001-09-01" @default.
• W2016036440 modified "2023-09-26" @default.
• W2016036440 title "Process development of methane–hydrogen–argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls" @default.
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• W2016036440 doi "https://doi.org/10.1116/1.1391252" @default.
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