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• W2016036762 abstract "Boron carbon nitride (BCN) films were deposited on silicon substrates by radio frequency (r.f.) (13.56 MHz) magnetron sputtering from hexagonal boron nitride (h-BN) and graphite targets in an Ar–N2 gas mixture of a constant pressure of 1.0 Pa. During deposition, the substrates were maintained at a temperature of 400°C and negatively biased using a pulsed voltage with a frequency of 330 kHz. Different analysis techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray diffraction (XRD) and scanning Auger electron microscopy (SAM) were used for characterization. In addition, the mechanical and tribological properties of the films were investigated by nano-indentation and micro-scratching. The carbon concentration in the films could be adjusted by the coverage area of a graphite sheet on the h-BN target, and decreased with increasing bias voltage. It was found that the ternary compound films within the B–C–N composition triangle possessed a less ordered structure. BN, BC and CN chemical bonds were established in the films, and no phase separation of graphite and h-BN occurred. At zero bias voltage, amorphous BC2N films with atomically smooth surface could be obtained, and the microfriction coefficient was 0.11 under a normal load of 1000 μN. Hardness as determined by nano-indentation was usually in the range of 10–30 GPa, whereas the Young’s modulus was within 100–200 GPa." @default.
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• W2016036762 date "2000-06-01" @default.
• W2016036762 modified "2023-10-14" @default.
• W2016036762 title "Synthesis and characterization of boron carbon nitride films by radio frequency magnetron sputtering" @default.
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• W2016036762 doi "https://doi.org/10.1016/s0257-8972(00)00600-9" @default.
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