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• W2016037617 abstract "Pt-gated AlGaN∕GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2–3min at 25°C upon removal of the hydrogen from the ambient." @default.
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• W2016037617 date "2005-10-24" @default.
• W2016037617 modified "2023-09-25" @default.
• W2016037617 title "Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors" @default.
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• W2016037617 doi "https://doi.org/10.1063/1.2117617" @default.
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