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• W2016039809 abstract "Silicon carbide (SiC) is an emerging wide bandgap semiconductor having superior physical properties such as high critical electric field and high saturated drift velocity. Discrete high-voltage, low-loss SiC power devices such as 600-1700 V Schottky barrier diodes and FETs (MOSFETs and JFETs) have currently been developed, and small-scale production has started. SiC is also attractive for advanced integrated circuits operating in high-temperature and radiation-hard circumstances. This paper reviews the present status, future prospects, and technological challenges of SiC devices and circuits." @default.
• W2016039809 created "2016-06-24" @default.
• W2016039809 creator A5042754568 @default.
• W2016039809 date "2014-09-01" @default.
• W2016039809 modified "2023-10-16" @default.
• W2016039809 title "Progress and future challenges of silicon carbide devices for integrated circuits" @default.
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• W2016039809 doi "https://doi.org/10.1109/cicc.2014.6946035" @default.
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