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- W2016050860 abstract "We have observed conversion from p- to n-type of the base layer of n+pp+ silicon diodes irradiated with more than roughly 5×1016 cm−2 1 MeV electrons. Annealing for 15 min at 200 °C results in a recovery of p-type conduction in diodes in which type conversion had been induced. Solar cells which employ the same diode structure are severely degraded by irradiation with more than 1016 cm−2 1 MeV electrons and show only a weak infrared response after irradiation with 1017 cm−2 1 MeV electrons, consistent with the creation of an n+np structure due to type conversion." @default.
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- W2016050860 date "1997-04-21" @default.
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- W2016050860 title "Type conversion in irradiated silicon diodes" @default.
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- W2016050860 doi "https://doi.org/10.1063/1.118946" @default.
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