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- W2016052783 abstract "In this paper, thin films TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> were prepared by magnetron sputtering through deposition of metal Ti on Si substrates and subsequent gas-solid state reaction. Structural evolution of the thin film TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> has been investigated from room temperature to 500 °C. Amorphous TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and its local crystallization in the thin films were observed by X-ray diffraction and transmission electron microscope (TEM). X-ray reflectivity experiments indicate that the expansion ratio of the thickness is 1.4 after oxidation at the temperature 300 °C. Dielectric constant of the amorphous TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin film is about 18 at room temperature. The formation mechanism of the oxide thin films is also discussed." @default.
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- W2016052783 date "2011-08-01" @default.
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- W2016052783 title "Structural evolution of amorphous thin films of titanium dioxide" @default.
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- W2016052783 doi "https://doi.org/10.1109/nano.2011.6144514" @default.
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