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- W2016065085 abstract "We present an etch-aware optical proximity correction (OPC) flow that is intended to optimize post-etch patternson wafer. We take advantage of resource efficient empirical etch models and a model based retargeting schemeto determine post-develop in-plane resist targets required to achieve post-etch critical dimensions. The goal ofthis flow is to optimize final patterns on wafer rather than two independent patterns from lithography and etch.As part of this flow, we cover important aspects of etch process variability implications for etch aware OPC.Metrics for total pattern transfer are developed and explored with an eye toward optimizing pattern transfer.We present results from a 45 nm poly-silicon and 32 nm shallow trench isolation levels where etch aware OPChas been applied and compare these results with conventional resist based OPC schemes.Finally, implications of this flow for unit process developers in lithography and reactive ion etch are explored.We present a process optimization flow that incorporates model based retargeting into resolution enhancementtechnology selection, materials selection as well as lithographic and reactive ion etch process development." @default.
- W2016065085 created "2016-06-24" @default.
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- W2016065085 date "2009-03-13" @default.
- W2016065085 modified "2023-09-23" @default.
- W2016065085 title "Etch aware optical proximity correction: a first step toward integrated pattern engineering" @default.
- W2016065085 doi "https://doi.org/10.1117/12.814224" @default.
- W2016065085 hasPublicationYear "2009" @default.
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