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- W2016094584 abstract "A technique for the continuous generation of arsine as required for organometallic vapor-phase epitaxial growth is described. Arsine is generated through the reduction of arsenic trichloride by lithium tetrahydridoaluminate in a nonvolatile ether. Reaction conditions appropriate for steady-state operation, necessary for this application, have been established. Arsenide conversion efficiencies in excess of 95% have been consistently demonstrated with arsine flows up to 100 μmol/min. GaAs grown using generated arsine exhibits a 77-K carrier concentration of 1.29×1015 cm−3 and mobility of 33 000 cm2/V s." @default.
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- W2016094584 date "1989-08-01" @default.
- W2016094584 modified "2023-10-16" @default.
- W2016094584 title "Point-of-use arsine generation for organometallic vapor-phase epitaxial growth" @default.
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- W2016094584 doi "https://doi.org/10.1063/1.343460" @default.
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