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- W2016098285 abstract "The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from the N -shaped current-voltage ( I - V ) characteristics to S -shaped I - V characteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments." @default.
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- W2016098285 date "2014-06-01" @default.
- W2016098285 modified "2023-09-23" @default.
- W2016098285 title "Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches" @default.
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- W2016098285 doi "https://doi.org/10.4028/www.scientific.net/amr.941-944.619" @default.
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