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- W2016098514 abstract "Light-induced ESR (LESR) in hydrogenated amorphous silicon at 77 K has been studied using four types of samples: standard, light-soaked, high-temperature-annealed (HTA), and low-temperature-deposited (LTs) samples. It is found that, in general, the density of neutral dangling bonds (D 0 ) increases under illumination. However, for strongly light-soaked samples, a slight decrease of the D 0 density occurs at illumination intensities below about 10 mW/cm 2 . The dependence of the D 0 density on illumination is argued to be caused by the conversion between charged and neutral dangling bonds. It is inferred that the densities of both neutral and charged dangling bonds are increased in HTA and in LTs a-Si:H. An asymmetry is observed between the spin densities of the broad ( N b ) and narrow ( N n ) components of the LESR signal in all the samples. The ratio of N b to N n is strongly dependent on the type of sample. However, the illumination intensity dependences of N b and N n are found to be identical and follow a power law. This indicates that N b and N n are highly interdependent and are probably governed by the same microscopic process." @default.
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- W2016098514 title "Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon" @default.
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- W2016098514 doi "https://doi.org/10.1143/jjap.34.3982" @default.
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