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- W2016104562 abstract "Backscattering and channeling of MeV 4He ions in single crystals covered with amorphous layers are discussed with the particular purpose of employing this nondestructive method to determine depth dependence of the composition, density and the total thickness of such layers. The analysis shows that the ratio of concentrations (and a relative depth scale) can be found directly from the experimental curves. To determine the absolute concentrations and depth scale independent measurement of stopping powers or layer thickness is required. Oxide layers grown on single crystal Si were used to verify the analytical results and, furthermore, we show illustrative analyses for samples with unknown characteristics. This technique may be applied rather extensively to the analysis of thin films." @default.
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- W2016104562 title "Analysis of amorphous layers on silicon by backscattering and channeling effect measurements" @default.
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- W2016104562 doi "https://doi.org/10.1016/0039-6028(70)90081-6" @default.
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