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• W2016113024 abstract "In this study, the characteristics of deep-ultraviolet light-emitting diodes (DUV-LEDs) with composition-varying AlGaN multilayer barriers are investigated numerically. The simulation results demonstrate that the proposed DUV-LEDs have better device performances, i.e., higher light output power and internal quantum efficiency, over their counterparts with typical single-layer AlGaN barriers. These improvements are attributed to the reduced markedly polarization-induced electrostatic field within the quantum wells (QWs), which is beneficial to enhance the electron–hole spatial overlap in QWs, suppress the electron leakage and increase the hole injection efficiency. Furthermore, the efficiency droop is also reduced significantly when the composition-varying AlGaN multilayer barriers are adopted." @default.
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• W2016113024 date "2014-12-01" @default.
• W2016113024 modified "2023-09-24" @default.
• W2016113024 title "Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers" @default.
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• W2016113024 doi "https://doi.org/10.1016/j.spmi.2014.10.003" @default.
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