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- W2016114667 abstract "This work studies the properties of the SiO 2 –Si 3 N 4 interface in oxide–nitride–oxide (ONO) structures by using energy loss spectroscopy, X-ray photoelectron spectroscopy, ellipsometry measurements and numerical simulation. By oxidation the as-deposited Si 3 N 4 , silicon–silicon bonds at Si 3 N 4 –thermal SiO 2 interface are found. These excess Si–Si bonds are produced by replacing nitrogen with oxygen during the oxidation of Si 3 N 4 . We further propose that the Si–Si bonds are the major trap center at the Si 3 N 4 –SiO 2 interface. With MINDO/3 numerical simulation, we have found that the Si–Si bonds can capture both electrons and holes at the top Si 3 N 4 –SiO 2 interface. These bonds are proposed to be the responsible candidate for the positive charge accumulation in re-oxidized nitrided oxide." @default.
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- W2016114667 date "1998-05-01" @default.
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- W2016114667 title "Characterization of the silicon nitride–thermal oxide interface in oxide–nitride–oxide structures by ELS, XPS, ellipsometry, and numerical simulation" @default.
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- W2016114667 doi "https://doi.org/10.1016/s0026-2714(98)00019-5" @default.
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