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- W2016119829 endingPage "394202" @default.
- W2016119829 startingPage "394202" @default.
- W2016119829 abstract "Atomic arrangements of Si(001), Si(110) and 4H-SiC(0001) surfaces after wet-chemical preparations are investigated with scanning tunneling microscopy. Their passivated structures as well as the surface formation mechanisms in aqueous solutions are discussed. On both Si(001) and Si(110) surfaces, simple 1 × 1 phases terminated by H atoms are clearly resolved after dilute HF dipping. Subsequent etching with water produces the surfaces with 'near-atomic' smoothness. The mechanisms of atomic-scale preferential etching in water are described in detail together with first-principles calculations. Furthermore, 4H-SiC(0001), which is a hard material and where it is difficult to control the surface structure by solutions, is flattened on the atomic scale with Pt as a catalyst in HF solution. After a mechanism is proposed based on electroless oxidation, the flattened surface mainly composed of a 1 × 1 phase is analyzed. The obtained results will be helpful from various scientific and technological viewpoints." @default.
- W2016119829 created "2016-06-24" @default.
- W2016119829 creator A5038392913 @default.
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- W2016119829 creator A5080012966 @default.
- W2016119829 creator A5085151957 @default.
- W2016119829 date "2011-09-15" @default.
- W2016119829 modified "2023-09-27" @default.
- W2016119829 title "Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations" @default.
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- W2016119829 doi "https://doi.org/10.1088/0953-8984/23/39/394202" @default.
- W2016119829 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/21921316" @default.
- W2016119829 hasPublicationYear "2011" @default.
- W2016119829 type Work @default.