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- W2016124898 abstract "Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions." @default.
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- W2016124898 date "2014-08-01" @default.
- W2016124898 modified "2023-10-11" @default.
- W2016124898 title "Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs" @default.
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- W2016124898 doi "https://doi.org/10.1063/1.4892609" @default.
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