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- W2016139757 abstract "Refractory metal silicides WSi2, TaSi2, and MoSi2 have been successfully formed by implanting As+ through the respective metal films deposited on Si. These ion-beam-induced silicides can be formed on 〈100〉 single-crystal Si substrates as well as on polycrystalline Si films. The formation and annealing of these silicides have been studied by He+ backscattering, x-ray diffraction, and sheet resistivity measurements. Apparently both the ion beam bombardment and some elevation of temperature during implantation are essential for silicide formation. Annealing these ion-beam-induced silicides reduces their resistivity and changes their crystallographic structure. The redistribution of implanted As is also observed." @default.
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- W2016139757 date "1980-08-01" @default.
- W2016139757 modified "2023-09-25" @default.
- W2016139757 title "Refractory metal silicide formation induced by As+ implantation" @default.
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- W2016139757 doi "https://doi.org/10.1063/1.91912" @default.
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