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• W2016144889 abstract "ZrO2 thin films were grown by the atomic layer epitaxy (ALE) technique using ZrCl4 and water as reactants. At 500°C amorphous films with good thickness uniformities were deposited onto soda lime glass substrates. However, rather long pulse and purge times were needed to realize the self-controlled growth. Films were characterized by means of spectrophotometry, RBS, NRA, SEM and AFM." @default.
• W2016144889 created "2016-06-24" @default.
• W2016144889 creator A5052591354 @default.
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• W2016144889 date "1994-01-01" @default.
• W2016144889 modified "2023-10-17" @default.
• W2016144889 title "Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor" @default.
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• W2016144889 doi "https://doi.org/10.1016/0169-4332(94)90180-5" @default.
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