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- W2016148681 abstract "The node in the Bloch part of the electron wave function expected for a Ga-site donor in GaP removes the usual valley-orbit splitting and associated chemical shift. However, the T2 ground state can still show a small spin-valley splitting into Γ8 and Γ7 states, as previously verified for the Sn donor. We find that the optical properties of the Ge and Si donors deviate appreciably from this “normal” behaviour. The Ge donor is anomalously deep, ED ∼ 202 meV, yet binds an exciton by ∼63 meV consistent with the Haynes rule for neutral donors in GaP. We find that this exciton possesses the large oscillator strength, f∼3.5 × 10-3, Zeeman and piezo-optical splittings characteristic of a Γ6, 1s(A1) ground state, like a P rather than Ga-site donor. However, f and the exciton localization energy are consistent with expectation for ED ∼ 200 meV, as measured from the lowest set of X conduction band minima, if we assume a symmetric A1-like wave function. A possible explanation for this unexpected result is advanced. The much shallower Si donor, ED∼82 meV, binds an exciton by only ∼ 14 meV, also consistent with the Haynes rule. By contrast, we find this Ga-site donor to be normal except that our Zeeman and piezo-optical results indicate an inverted spin-valley splitting, about 25% of that for the still shallower Sn donor. We also discuss the numerous low-lying excited states, some anomalous phonon replicas in the Ge and Si donor bound exciton spectra and the magneto-optical properties of a sharp line near 2.24 eV, attributed to the decay of excitons bound to (S)p-(Ge)p donor-acceptor associates." @default.
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- W2016148681 date "1974-12-01" @default.
- W2016148681 modified "2023-09-26" @default.
- W2016148681 title "The gallium-site donors germanium and silicon in gallium phosphide" @default.
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- W2016148681 doi "https://doi.org/10.1016/0022-2313(74)90030-1" @default.
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