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- W2016148908 abstract "Abstract Ga terminated surface of heavily doped conductive GaN(0001) bulk single crystal was used as a rotating disk electrode (RDE) to electrodeposit ZnO thin film employing reduction of O 2 . Although the native surface was rather inactive for the reduction of O 2 , it was activated by dipping in HCl and further by prolonged electrolysis to reduce O 2 in a Zn 2+ free solution. Koutecky–Levich analysis revealed important kinetic constants, such as the standard charge transfer rate constant ( k 0 ) of 2.4 × 10 –14 cm s –1 and the transfer coefficient ( α ) of 0.11 at 70 °C for the reduction of O 2 at the most activated GaN(0001). Electrodeposition of ZnO from the bath containing ZnCl 2 lead to an epitaxial growth of ZnO in a ZnO[100] ‖ GaN[100] alignment as confirmed from the XRD ω scan with θ adjusted to ZnO(10 $ bar 1 $ 2). The higher level of epitaxy was achieved for the more active surfaces of GaN as estimated from narrowing of the full width at half maximum (fwhm) of the peaks in the XRD ω ‐scan. Such films were also fully covering the surface of GaN as found in the SEM observation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2016148908 title "Epitaxial electrodeposition of ZnO thin film on GaN(0001) bulk single crystal" @default.
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- W2016148908 doi "https://doi.org/10.1002/pssa.200779422" @default.
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