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- W2016159380 abstract "Phosphorus irradiation at a low energy (50 keV) and at a dosage of 8×1014 ions/cm2 was carried out on 〈002〉 ZnO films grown by using a pulsed laser deposition technique (Sample A). Subsequent rapid thermal annealing at 650 °C and 750 °C was performed to remove defects resulting from the irradiation (samples B and C, respectively). Atomic force microscopy was used to determine the root mean square roughness, which was 10.07, 8.66, and 9.31 nm for samples A, B, and C, respectively. Low-temperature photoluminescence measurements revealed increased deep-level defect peaks following irradiation; however, the subsequent annealing minimized the defects. Although the dominant donor-bound exciton peak verifies the n-type conductivity of the films, the free–electron–to–acceptor and donor-to-acceptor pair peaks in the irradiated samples confirm an increase in acceptor concentration." @default.
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- W2016159380 date "2012-05-01" @default.
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- W2016159380 title "Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films" @default.
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- W2016159380 doi "https://doi.org/10.1016/j.jlumin.2011.12.058" @default.
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