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- W2016168710 abstract "AlInN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been fabricated with reactive-ion-sputtered (RIS) Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> as a gate dielectric. Significant reduction in the gate leakage current is achieved upon insertion of RIS-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> . MIS-HEMTs also show better transconductance, drain characteristics, and ION/IOFF ratio. Most interestingly, a positive shift in threshold voltage is observed for MIS-HEMTs indicating the presence of net negative charge at oxide-semiconductor interface. The origin and stability of the negative charge at the interface is discussed in this letter." @default.
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- W2016168710 date "2014-11-01" @default.
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- W2016168710 title "Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al<sub>2</sub>O<sub>3</sub>/AlInN/GaN MIS-HEMT" @default.
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- W2016168710 doi "https://doi.org/10.1109/led.2014.2357837" @default.
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