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- W2016181546 abstract "A novel molecular resist material based on polyhedral oligomeric silsesquioxane, possessing diazoketo groups, was successfully synthesized for deep UV lithography. The initial lithographic evaluation of the molecular resist shows the potential of the new platform for the next generation resists." @default.
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- W2016181546 date "2006-01-01" @default.
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- W2016181546 title "Photobleachable silicon-containing molecular resist for deep UV lithography" @default.
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- W2016181546 doi "https://doi.org/10.1039/b606937a" @default.
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