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- W2016184808 abstract "InASxSb1-x/InSb strained-layer superlattices were grown by metalorganic chemical vapor deposition on four different types of compositionally graded InAsySb1-y buffer layers. The samples were examined by X-ray diffraction and optical and transmission electron microscopy. Comparisons of the resulting surface morphology and residual strain were made between constant composition, step-graded and two types of continuously graded buffer layers. Both the buffer layer thickness and composition profile were found to affect the formation of microcracks and dislocations. Residual strain in the buffer layers examined in this study was minimized by the use of a linear variation of the composition in the graded buffer layers." @default.
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- W2016184808 date "1988-09-01" @default.
- W2016184808 modified "2023-09-24" @default.
- W2016184808 title "Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD" @default.
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- W2016184808 doi "https://doi.org/10.1016/0022-0248(88)90119-4" @default.
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