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- W2016206004 abstract "In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm2." @default.
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- W2016206004 date "2015-03-01" @default.
- W2016206004 modified "2023-10-18" @default.
- W2016206004 title "Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers" @default.
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- W2016206004 doi "https://doi.org/10.1063/1.4916268" @default.
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