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- W2016208243 abstract "Proposed mechanisms on defect reactions in semiconductors (defect creation, annihilation, multiplication, reconstruction, impurity diffusion, etc.) are reexamined with particular attention to the instability of the lattice and the transient lattice vibration induced by successive carrier captures. (1) Thermal activation process to overcome the potential barrier Un: it which depends on the electronic state n the reaction rate is given by p0exp(-Un/kBT). (2) Instability mechanism: the lattice relaxation after an electronic transition at a defect promptly induces the reaction coordinate QR. (3) Phonon kick mechanism (single capture): if the relaxation mode Q1 partially includes QR, an electronic transition to the state n enhances the defect reaction during the lattice relaxation time τ∼2π⧸Δω where Δω is the width of the frequency distribution of related phonons. (4) Phonon kick mechanism (recombination): if N pairs of electron and hole are captured within a short period τ∼2π/Δω and the central frequency ωR of QR is not so different from ω0 of Q1, the band gap energy Eg is transformed by a series of coherent carrier captures into the lattice vibration energy. The defect reaction rate is given by (ω0/2π)exp(−Eiact/kBT) because only the first capture (i=e,h) is to be activated. On the other hand, if ωR is much different from ω0, the rate is (ω0/2π)exp(−U0*/kBT) with U0−(Eiact+Eith) because the N phonon-kicks are out of phase." @default.
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- W2016208243 date "2001-12-01" @default.
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- W2016208243 title "Mechanisms of capture- and recombination-enhanced defect reactions in semiconductors" @default.
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- W2016208243 doi "https://doi.org/10.1016/s0921-4526(01)00724-4" @default.
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