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- W2016210672 abstract "An analysis is made of an amorphous-crystalline semiconductor heterojunction from the view-point of the steady-state transport. I-U and C-U characteristics are solved by means of a model assuming an interface barrier. A modified Schottky diode theory is employed whereby a variation in the barrier due to the space charge in the interface appears as a new factor and further the existence of this charge built at the interface of both semiconductors is considered. Experimental results with the structure CdSe-As2Se3 prove the model proposed. The method may be used for the determination of the properties of both, semiconductors and their interface as well. Es wird der Heteroübergang bei amorph-kristallinen Halbleitern vom Standpunkt des Transports im stationären Zustand analysiert. Mit Hilfe eines Modells, das auf der Annahme einer Barriere an der Grenzschicht beruht, werden I-U- und C-U-Kennlinien gelöst. Als Ausgangspunkt für die Lösung dient eine modifizierte Schottky-Dioden-Theorie, wobei als neuer Faktor eine durch die Raumladung an der Grenzschicht hervorgerufene Änderung in der Barriere in Erscheinung tritt und ferner wird die Existenz dieser an der Grenzschicht beider Halbleiter eingebauten Ladung in Erwägung gezogen. Experimentelle Ergebnisse an der CdSe-As2, Se3-Struktur beweisen die Verwendbarlieit des vorgeschlagenen Modells. Die beschriebene Methode kann auch zur Feststellung der Eigenschaften beider Halbleiter und ihrer Grenzschicht benutzt werden." @default.
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- W2016210672 date "1982-04-16" @default.
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- W2016210672 title "Amorphous-crystalline heterojunction with built-in interface charge: I. Steady-state transport" @default.
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- W2016210672 doi "https://doi.org/10.1002/pssa.2210700246" @default.
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